Samsung M471B1G73QH0-YK0 8GB vs Cortus SAS 8ATF1G64AZ-2G6E1 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 68

左右 31% 更低的延时

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

需要考虑的原因
Cortus SAS 8ATF1G64AZ-2G6E1 8GB

报告一个错误

更快的读取速度，GB/s

15 11.8

测试中的平均数值
更快的写入速度，GB/s

8.8 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 68
读取速度，GB/s

11.8 15.0
写入速度，GB/s

8.0 8.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2061 1904

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M471B5273DH0-CH9 4GB

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King Tiger Technology Tigo-2400MHz-8G 8GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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Crucial Technology CT16G4DFRA32A.M16FR 16GB

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Crucial Technology BLT8G4D30AETA.K16FD 8GB

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Team Group Inc. UD5-6400 16GB

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Corsair CMD8GX3M2A2933C12 4GB

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Patriot Memory (PDP Systems) PSD48G213381 8GB

Patriot Memory (PDP Systems) PSD48G213381 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston 9905700-046.A00G 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB