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Samsung M378A2G43BB3-CWE 16GB
Kingston HX432C15PB3/16G 16GB

Samsung M378A2G43BB3-CWE 16GB vs Kingston HX432C15PB3/16G 16GB

总分
star star star star star
Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

总分
star star star star star
Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB

差异 规格 评论

差异

Samsung M378A2G43BB3-CWE 16GB 需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 15.8
    测试中的平均数值
Kingston HX432C15PB3/16G 16GB 需要考虑的原因
Kingston HX432C15PB3/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 38
    左右 -6% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 10.4
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A2G43BB3-CWE 16GB
Kingston HX432C15PB3/16G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 36
  • 读取速度，GB/s
    17.9 left arrow 15.8
  • 写入速度，GB/s
    10.4 left arrow 10.6
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3030 left arrow 2736

Samsung M378A2G43BB3-CWE 16GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston HX432C15PB3/16G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9905701-008.A00G 16GB
Kingston 9905701-008.A00G 16GB
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Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
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Kingston XVTW4H-MIE 32GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
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Samsung M393A1G40DB0-B`B 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
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Kingston K531R8-MIN 4GB
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Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK64GX4M4C3000C15 16GB
Corsair CMK64GX4M4C3000C15 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Kingston MSI24D4U7S8MH-8 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
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Mushkin MR[A/B]4U320LLLM16G 16GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Crucial Technology BL8G26C16U4W.8FD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
内存RAM