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Samsung M378A5244CB0-CTD 4GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Samsung M378A5244CB0-CTD 4GB vs Crucial Technology BL16G32C16U4BL.M8FB1 16GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
Crucial Technology BL16G32C16U4BL.M8FB1 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 36
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 30
  • 读取速度，GB/s
    15.8 left arrow 16.9
  • 写入速度，GB/s
    11.8 left arrow 13.2
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 3462

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMH16GX4M2Z3600C18 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4400C16-8GVK 8GB
G Skill Intl F4-4400C16-8GVK 8GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
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G Skill Intl F4-3000C14-16GVRD 16GB
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Kingston 9905403-011.A03LF 2GB
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内存RAM
PNY Electronics 64C0MHHHJ-HS 4GB
PNY Electronics 64C0MHHHJ-HS 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9965596-019.B01G 4GB
Kingston 9965596-019.B01G 4GB
内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
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Golden Empire CL18-20-20 D4-3200 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
Patriot Memory (PDP Systems) 4266 C18 Series 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Corsair CMW32GX4M2Z3600C14 16GB
内存RAM
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Samsung M471B5273EB0-CK0 4GB
Corsair CMT64GX4M4Z3600C18 16GB
Corsair CMT64GX4M4Z3600C18 16GB
内存RAM