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Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB

Samsung M378A5244CB0-CTD 4GB vs Crucial Technology CT4G4DFS8213.8FA11 4GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Crucial Technology CT4G4DFS8213.8FA11 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 36
    左右 -50% 更低的延时

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 24
  • 读取速度，GB/s
    15.8 left arrow 15.4
  • 写入速度，GB/s
    11.8 left arrow 11.5
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 2534

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Crucial Technology CT4G4DFS8213.8FA11 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P24HC8T1-BSFS 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A8K40B21-CTC 64GB
Samsung M393A8K40B21-CTC 64GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 9905624-033.A00G 8GB
Kingston 9905624-033.A00G 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMD16GX4M2B3000C15 8GB
Corsair CMD16GX4M2B3000C15 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Kingston 9905625-029.A00G 8GB
Kingston 9905625-029.A00G 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
内存RAM