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Samsung M378A5244CB0-CTD 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Samsung M378A5244CB0-CTD 4GB vs Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 27
  • 读取速度，GB/s
    15.8 left arrow 18.3
  • 写入速度，GB/s
    11.8 left arrow 15.8
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 3899

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905744-006.A00G 16GB
Kingston 9905744-006.A00G 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Kingston KTD3KX-MIB 8GB
内存RAM
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Asgard VMA45UG-MEC1U2AW1 8GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM