Samsung M378B5173BH0-CH9 4GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 34

左右 32% 更低的延时

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

报告一个错误

更快的读取速度，GB/s

17.3 13.4

测试中的平均数值
更快的写入速度，GB/s

14.5 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 34
读取速度，GB/s

13.4 17.3
写入速度，GB/s

8.0 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSB.16FBD 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMT64GX4M4Z3600C18 16GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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Hewlett-Packard 7EH98AA#ABB 8GB

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Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Kingston KCRXJ6-MIE 16GB

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Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

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Crucial Technology CT32G48C40U5.M16A1 32GB

Crucial Technology CT32G48C40U5.M16A1 32GB