Samsung M378B5173BH0-CH9 4GB vs Crucial Technology BLE4G4D32AEEA.K8FE 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FE 4GB

报告一个错误

更快的读取速度，GB/s

22.9 13.4

测试中的平均数值
更快的写入速度，GB/s

17.7 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 26
读取速度，GB/s

13.4 22.9
写入速度，GB/s

8.0 17.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 93T5750CZA-CE6 2GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology BLE4G4D32AEEA.K8FE 4GB

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Kingston K1N7HK-ELC 2GB

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Corsair CMD32GX4M4B3866C18 8GB

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G Skill Intl F4-3000C15-8GRBB 8GB

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Crucial Technology BLS4G4D240FSB.8FBD2 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB