Samsung M378B5173BH0-CH9 4GB vs Gloway International (HK) STK4U2400D17042C 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Gloway International (HK) STK4U2400D17042C 4GB

Gloway International (HK) STK4U2400D17042C 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

Gloway International (HK) STK4U2400D17042C 4GB

需要考虑的原因
Gloway International (HK) STK4U2400D17042C 4GB

报告一个错误

更快的读取速度，GB/s

18 13.4

测试中的平均数值
更快的写入速度，GB/s

13.4 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Gloway International (HK) STK4U2400D17042C 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 23
读取速度，GB/s

13.4 18.0
写入速度，GB/s

8.0 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2675

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV8GX4M1A2666C18 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Kingston KHX3466C16D4/16GX 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

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Corsair CML16GX3M2A1600C10 8GB

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Patriot Memory (PDP Systems) PSD416G21332 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston 16ATF2G64AZ-2G1B1 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB