Samsung M378B5173BH0-CH9 4GB vs Kingston 9905678-042.A00G 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Kingston 9905678-042.A00G 8GB

Kingston 9905678-042.A00G 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

Kingston 9905678-042.A00G 8GB

需要考虑的原因
Kingston 9905678-042.A00G 8GB

报告一个错误

更快的读取速度，GB/s

15.9 13.4

测试中的平均数值
更快的写入速度，GB/s

9.5 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Kingston 9905678-042.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 23
读取速度，GB/s

13.4 15.9
写入速度，GB/s

8.0 9.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX4M4D3000C16 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

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SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Panram International Corporation PUD43000C158G2NJK 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Transcend Information TS2GLH64V1B 16GB

Transcend Information TS2GLH64V1B 16GB