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Samsung M378B5173BH0-CH9 4GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB

Samsung M378B5173BH0-CH9 4GB vs Micron Technology 36ASF4G72LZ-2G3B1 32GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 34
    左右 32% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 7.6
    测试中的平均数值
Micron Technology 36ASF4G72LZ-2G3B1 32GB 需要考虑的原因
Micron Technology 36ASF4G72LZ-2G3B1 32GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 34
  • 读取速度，GB/s
    13.4 left arrow 11.2
  • 写入速度，GB/s
    8.0 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 2245

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Micron Technology 36ASF4G72LZ-2G3B1 32GB
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内存RAM
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内存RAM
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