Samsung M378B5173BH0-CH9 4GB vs Micron Technology 72ASS8G72LZ-2G3B2 64GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 39% 更低的延时
更快的读取速度，GB/s

13.4 9.3

测试中的平均数值
更快的写入速度，GB/s

8.0 6.6

测试中的平均数值

Micron Technology 72ASS8G72LZ-2G3B2 64GB

需要考虑的原因
Micron Technology 72ASS8G72LZ-2G3B2 64GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 38
读取速度，GB/s

13.4 9.3
写入速度，GB/s

8.0 6.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2107

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD128GX4M8B3000C16 16GB

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Corsair CM4B8G1L2666A18S4 8GB

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Corsair VSA2GSDS667C4 2GB

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Kingston 99U5713-003.A00G 4GB

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Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

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Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

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