Samsung M378B5173BH0-CH9 4GB vs Patriot Memory (PDP Systems) 3200 C16 Series 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3200 C16 Series 8GB

报告一个错误

更快的读取速度，GB/s

18 13.4

测试中的平均数值
更快的写入速度，GB/s

14.3 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

13.4 18.0
写入速度，GB/s

8.0 14.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3200C16-8GVKBN 8GB

G Skill Intl F4-3200C16-8GVKBN 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3400C16-8GTZKW 8GB

G Skill Intl F4-3400C16-8GTZKW 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Wilk Elektronik S.A. GR1600D364L11/8G 8GB

Wilk Elektronik S.A. GR1600D364L11/8G 8GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Corsair CMH16GX4M2Z3600C18 8GB

Corsair CMH16GX4M2Z3600C18 8GB