Samsung M378B5173BH0-CH9 4GB vs Patriot Memory (PDP Systems) PSD416G24002S 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 21% 更低的延时

Patriot Memory (PDP Systems) PSD416G24002S 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G24002S 16GB

报告一个错误

更快的读取速度，GB/s

13.7 13.4

测试中的平均数值
更快的写入速度，GB/s

10.6 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 29
读取速度，GB/s

13.4 13.7
写入速度，GB/s

8.0 10.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2422

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X16GE2133C13K8 16GB

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Kingston 9905734-022.A00G 16GB

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Kingston 9905469-143.A00LF 4GB

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Corsair CMK16GX4M2Z2666C16 8GB

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Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

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Solarflare Communications CT16G4DFD824A.C16FBR 16GB

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Crucial Technology BLS8G3N169ES4.16FE 8GB

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB