Samsung M378B5173BH0-CH9 4GB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 31

左右 26% 更低的延时

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

报告一个错误

更快的读取速度，GB/s

13.5 13.4

测试中的平均数值
更快的写入速度，GB/s

10.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 31
读取速度，GB/s

13.4 13.5
写入速度，GB/s

8.0 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

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AMD R5S38G1601U2S 8GB

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Corsair CMD64GX4M4B3466C16 16GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Apacer Technology 78.C1GET.9K10C 8GB

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Corsair CMH32GX4M2Z3200C16 16GB

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PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT16G4SFD8266 16GB

Crucial Technology CT16G4SFD8266 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB