Samsung M378B5273CH0-CH9 4GB vs A-DATA Technology AM1P24HC4R1-BUNS 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

A-DATA Technology AM1P24HC4R1-BUNS 4GB

需要考虑的原因
A-DATA Technology AM1P24HC4R1-BUNS 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更快的读取速度，GB/s

15 13.2

测试中的平均数值
更快的写入速度，GB/s

11.9 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

13.2 15.0
写入速度，GB/s

8.4 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2477

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston 9905403-156.A00LF 2GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK8GX4M1D3000C16 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Kingston KM0VW4-MID 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

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Samsung M378A5244CB0-CTD 4GB

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G Skill Intl F4-2666C18-8GRS 8GB

G Skill Intl F4-2666C18-8GRS 8GB

Kingston K531R8-MIN 4GB

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Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB