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Samsung M378B5273CH0-CH9 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB

Samsung M378B5273CH0-CH9 4GB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB

总分
star star star star star
Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分
star star star star star
A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

差异 规格 评论

差异

Samsung M378B5273CH0-CH9 4GB 需要考虑的原因
Samsung M378B5273CH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 39
    左右 5% 更低的延时
A-DATA Technology AO2P32NCSV1-BEVS 16GB 需要考虑的原因
A-DATA Technology AO2P32NCSV1-BEVS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 39
  • 读取速度，GB/s
    13.2 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2852

Samsung M378B5273CH0-CH9 4GB RAM的比较

Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Apacer Technology D22.2221ZA.001 8GB
Apacer Technology D22.2221ZA.001 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Teikon TMA81GU6AFR8N-UHSC 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CMN32GX4M2Z3600C16 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Avant Technology J642GU42J7240N2 16GB
Avant Technology J642GU42J7240N2 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-8GTRS 8GB
G Skill Intl F4-3600C16-8GTRS 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Apacer Technology 78.DAGP2.4030B 16GB
Apacer Technology 78.DAGP2.4030B 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M2C3600C20 8GB
Corsair CMK16GX4M2C3600C20 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM