Samsung M378B5273CH0-CH9 4GB vs AMD R744G2606U1S 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 76

左右 51% 更低的延时

AMD R744G2606U1S 4GB

需要考虑的原因
AMD R744G2606U1S 4GB

报告一个错误

更快的读取速度，GB/s

15.7 13.2

测试中的平均数值
更快的写入速度，GB/s

8.7 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

AMD R744G2606U1S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 76
读取速度，GB/s

13.2 15.7
写入速度，GB/s

8.4 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A1600C10 8GB

Corsair CMZ16GX3M2A1600C10 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905702-082.A00G 8GB

Kingston 9905702-082.A00G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6CFR8A-PB 4GB

SK Hynix HMT351S6CFR8A-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston KHX2133C13S4/4G 4GB

Kingston KHX2133C13S4/4G 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB