Ramaxel Technology RMT3160ED58E9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Ramaxel Technology RMT3160ED58E9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

更快的读取速度，GB/s

12.3 10.5

测试中的平均数值
更快的写入速度，GB/s

7.8 6.6

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

31 40

左右 -29% 更低的延时

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 31
读取速度，GB/s

12.3 10.5
写入速度，GB/s

7.8 6.6
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1806 1669

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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