Ramaxel Technology RMT3160ED58E9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

総合得点

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

相違点仕様コメント

相違点

Ramaxel Technology RMT3160ED58E9W1600 4GB

考慮すべき理由
Ramaxel Technology RMT3160ED58E9W1600 4GB

バグを報告する

読み出し速度の高速化、GB/s

12.3 10.5

テスト平均値
書き込み速度の高速化、GB/s

7.8 6.6

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 40

周辺 -29% 低遅延

仕様

技術仕様の完全リスト

Ramaxel Technology RMT3160ED58E9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMT425S6AFR6A-PB 2GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

40 31
読み出し速度、GB/s

12.3 10.5
書き込み速度、GB/秒

7.8 6.6
メモリ帯域幅、mbps

12800 12800

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
タイミング / クロック速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

1806 1669

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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