Samsung M378B5273CH0-CH9 4GB vs Corsair CMD32GX4M4C3000C15 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 38

左右 3% 更低的延时

Corsair CMD32GX4M4C3000C15 8GB

需要考虑的原因
Corsair CMD32GX4M4C3000C15 8GB

报告一个错误

更快的读取速度，GB/s

14.8 13.2

测试中的平均数值
更快的写入速度，GB/s

12.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Corsair CMD32GX4M4C3000C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 38
读取速度，GB/s

13.2 14.8
写入速度，GB/s

8.4 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

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Samsung M378B5273CH0-CH9 4GB

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Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

Kingston 9905471-001.A01LF 2GB

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Mushkin 99[2/7/4]204[F/T] 4GB

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Avant Technology F6451U64F9333G 4GB

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Corsair CMK32GX4M4K4133C19 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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A-DATA Technology AO1P32NC8T1-BCIS 8GB

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Kingston 9905469-143.A00LF 4GB

Corsair CMK64GX4M8X4000C19 8GB

Corsair CMK64GX4M8X4000C19 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology BLS8G4D240FSBK.8FBD 8GB

Crucial Technology BLS8G4D240FSBK.8FBD 8GB