Samsung M378B5273CH0-CH9 4GB vs Corsair CMK16GX4M2F4400C19 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Corsair CMK16GX4M2F4400C19 8GB

需要考虑的原因
Corsair CMK16GX4M2F4400C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 37

左右 -131% 更低的延时
更快的读取速度，GB/s

21.7 13.2

测试中的平均数值
更快的写入速度，GB/s

17.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Corsair CMK16GX4M2F4400C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 16
读取速度，GB/s

13.2 21.7
写入速度，GB/s

8.4 17.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5403-465.A00LF 8GB

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston 9905624-051.A00G 8GB

Kingston 9905624-051.A00G 8GB

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Kingston 9905471-076.A00LF 8GB

Corsair CMK64GX4M2D3600C18 32GB

Corsair CMK64GX4M2D3600C18 32GB