Samsung M378B5273CH0-CH9 4GB vs Crucial Technology BL16G36C16U4W.M8FB1 16GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BL16G36C16U4W.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4W.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更快的读取速度，GB/s

19.4 13.2

测试中的平均数值
更快的写入速度，GB/s

15.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 26
读取速度，GB/s

13.2 19.4
写入速度，GB/s

8.4 15.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 3783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramos Technology EWB8GB681CA3-16IC 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Colorful Technology Ltd BAPC08G2666D4S8 8GB

Colorful Technology Ltd BAPC08G2666D4S8 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Corsair CMK32GX4M2A2666C16 16GB

Corsair CMK32GX4M2A2666C16 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston 9965669-032.A00G 16GB

Kingston 9965669-032.A00G 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB