Samsung M378B5273CH0-CH9 4GB vs Crucial Technology BLS4G4S240FSD.8FAR 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BLS4G4S240FSD.8FAR 4GB

需要考虑的原因
Crucial Technology BLS4G4S240FSD.8FAR 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

15.5 13.2

测试中的平均数值
更快的写入速度，GB/s

11.4 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.2 15.5
写入速度，GB/s

8.4 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Micron Technology 4KTF25664HZ-1G6E1 2GB

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SK Hynix HMT325S6EFR8A-PB 2GB

SK Hynix HMT325S6EFR8A-PB 2GB

Kingston 9905403-090.A01LF 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB