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Micron Technology 4KTF25664HZ-1G6E1 2GB
SK Hynix HMT325S6EFR8A-PB 2GB

Micron Technology 4KTF25664HZ-1G6E1 2GB vs SK Hynix HMT325S6EFR8A-PB 2GB

总分
star star star star star
Micron Technology 4KTF25664HZ-1G6E1 2GB

Micron Technology 4KTF25664HZ-1G6E1 2GB

总分
star star star star star
SK Hynix HMT325S6EFR8A-PB 2GB

SK Hynix HMT325S6EFR8A-PB 2GB

差异 规格 评论

差异

Micron Technology 4KTF25664HZ-1G6E1 2GB 需要考虑的原因
Micron Technology 4KTF25664HZ-1G6E1 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 6.7
    测试中的平均数值
SK Hynix HMT325S6EFR8A-PB 2GB 需要考虑的原因
SK Hynix HMT325S6EFR8A-PB 2GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 4KTF25664HZ-1G6E1 2GB
SK Hynix HMT325S6EFR8A-PB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    14.1 left arrow 9.6
  • 写入速度，GB/s
    8.7 left arrow 6.7
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2207 left arrow 1204

Micron Technology 4KTF25664HZ-1G6E1 2GB RAM的比较

Samsung M471B5674QH0-YK0 2GB
A-DATA Technology 11137401 8GB

SK Hynix HMT325S6EFR8A-PB 2GB RAM的比较

AMD R534G1601U1S 4GB
Netac Technology Co Ltd E40832A 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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