Samsung M378B5273CH0-CH9 4GB vs Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

需要考虑的原因
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

18.2 13.2

测试中的平均数值
更快的写入速度，GB/s

13.7 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

13.2 18.2
写入速度，GB/s

8.4 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 3389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Samsung M378B5673EH1-CF8 2GB

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Samsung M471B5173DB0-YK0 4GB

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Samsung M378B5273CH0-CH9 4GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMD32GX4M4E4000C19 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Apacer Technology 78.B1GN3.AZ32B 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB