Samsung M378B5273CH0-CH9 4GB vs G Skill Intl F4-3200C14-8GTZN 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

G Skill Intl F4-3200C14-8GTZN 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的读取速度，GB/s

20.6 13.2

测试中的平均数值
更快的写入速度，GB/s

15.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-3200C14-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

13.2 20.6
写入速度，GB/s

8.4 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair CMR64GX4M4K3600C18 16GB

Corsair CMR64GX4M4K3600C18 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KF2666C16S4/16G 16GB

Kingston KF2666C16S4/16G 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB