Samsung M378B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Samsung M378B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 12.7

测试中的平均数值
更快的写入速度，GB/s

8.4 6.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 -54% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 24
读取速度，GB/s

13.2 12.7
写入速度，GB/s

8.4 6.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CF7 2GB

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Crucial Technology CT4G4DFS824A.M8FF 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB