Samsung M378B5273CH0-CH9 4GB vs Kingston KF3200C20S4/8G 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 14% 更低的延时

Kingston KF3200C20S4/8G 8GB

需要考虑的原因
Kingston KF3200C20S4/8G 8GB

报告一个错误

更快的读取速度，GB/s

15.4 13.2

测试中的平均数值
更快的写入速度，GB/s

13.3 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston KF3200C20S4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 43
读取速度，GB/s

13.2 15.4
写入速度，GB/s

8.4 13.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4S240FSDK.8FD 8GB

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Kingston KF3200C20S4/8G 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Kingston 9905598-006.A00G 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

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Kingston 9905471-001.A01LF 2GB

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Kingston 9905663-006.A00G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB