Samsung M378B5273CH0-CH9 4GB vs Kingston X75V1H-MIE 32GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 57

左右 35% 更低的延时

Kingston X75V1H-MIE 32GB

需要考虑的原因
Kingston X75V1H-MIE 32GB

报告一个错误

更快的读取速度，GB/s

16.7 13.2

测试中的平均数值
更快的写入速度，GB/s

15.5 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston X75V1H-MIE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 57
读取速度，GB/s

13.2 16.7
写入速度，GB/s

8.4 15.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2886

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-007.A00LF 4GB

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InnoDisk Corporation M4S0-8GSSOCRG 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BLS8G4D240FSEK.8FD 8GB

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Kingston 9905403-447.A00LF 4GB

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Panram International Corporation PUD42133C154G2VS 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-4000C16-8GVK 8GB

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Panram International Corporation M424016 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

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Kingston 9905403-156.A00LF 2GB

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Kingston KVR16N11/8-SP 8GB

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