Samsung M378B5273CH0-CH9 4GB vs OCMEMORY OCM3200CL16D-16GBN 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 55

左右 33% 更低的延时

OCMEMORY OCM3200CL16D-16GBN 8GB

需要考虑的原因
OCMEMORY OCM3200CL16D-16GBN 8GB

报告一个错误

更快的读取速度，GB/s

19 13.2

测试中的平均数值
更快的写入速度，GB/s

9.0 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

OCMEMORY OCM3200CL16D-16GBN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 55
读取速度，GB/s

13.2 19.0
写入速度，GB/s

8.4 9.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology CT16G4DFD8266.C16FE 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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SK Hynix HMA81GS6CJRJR-VK 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

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Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HD0NS-CG 4GB

Nanya Technology NT4GC64B8HD0NS-CG 4GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

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Kingston ASU21D4U5S8MB-8 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

Apacer Technology 78.CAGPP.40C0B 8GB