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Samsung M378B5273DH0-CH9 4GB
AMD R748G2400S2S 8GB

Samsung M378B5273DH0-CH9 4GB vs AMD R748G2400S2S 8GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 135
    左右 70% 更低的延时
  • 更快的写入速度，GB/s
    8.3 left arrow 8.2
    测试中的平均数值
AMD R748G2400S2S 8GB 需要考虑的原因
AMD R748G2400S2S 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 13.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
AMD R748G2400S2S 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 135
  • 读取速度，GB/s
    13.3 left arrow 15.2
  • 写入速度，GB/s
    8.3 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 1359

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

AMD R748G2400S2S 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Corsair CMK128GX4M4A2400C16 32GB
Corsair CMK128GX4M4A2400C16 32GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
AMD R748G2400S2S 8GB
AMD R748G2400S2S 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMK64GX4M4K3733C17 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9965662-012.A01G 16GB
Kingston 9965662-012.A01G 16GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Avant Technology W641GU42J9266NB 8GB
Avant Technology W641GU42J9266NB 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Mushkin MES4S213FF16G28 16GB
Mushkin MES4S213FF16G28 16GB
内存RAM