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Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB

Samsung M378B5273DH0-CH9 4GB vs Crucial Technology CT8G4SFS824A.M8FJ 8GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
Crucial Technology CT8G4SFS824A.M8FJ 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
Crucial Technology CT8G4SFS824A.M8FJ 8GB 需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 41
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 34
  • 读取速度，GB/s
    13.3 left arrow 15.0
  • 写入速度，GB/s
    8.3 left arrow 10.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 2516

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
G Skill Intl F5-6000U3636E16G 16GB
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Nanya Technology NT512T64U88B0BY-3C 512MB
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内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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内存RAM
PUSKILL DDR3 1600 8G 8GB
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内存RAM
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Corsair CMR64GX4M8X3800C19 8GB
内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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