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Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-2666C18-4GFX 4GB

Samsung M378B5273DH0-CH9 4GB vs G Skill Intl F4-2666C18-4GFX 4GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 74
    左右 45% 更低的延时
G Skill Intl F4-2666C18-4GFX 4GB 需要考虑的原因
G Skill Intl F4-2666C18-4GFX 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-2666C18-4GFX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 74
  • 读取速度，GB/s
    13.3 left arrow 15.4
  • 写入速度，GB/s
    8.3 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 1849

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

G Skill Intl F4-2666C18-4GFX 4GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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