Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-2666C18-4GFX 4GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 74

左右 53% 更低的延时
更快的写入速度，GB/s

9.6 8.6

测试中的平均数值

G Skill Intl F4-2666C18-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2666C18-4GFX 4GB

报告一个错误

更快的读取速度，GB/s

15.4 13.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2666C18-4GFX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 74
读取速度，GB/s

13.7 15.4
写入速度，GB/s

9.6 8.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 1849

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Mushkin 994093 4GB

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G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB