Crucial Technology CT51264BD160B.C16F 4GB vs A-DATA Technology AM1P26KC4U1-BACS 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 12.8

测试中的平均数值

A-DATA Technology AM1P26KC4U1-BACS 4GB

需要考虑的原因
A-DATA Technology AM1P26KC4U1-BACS 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更快的写入速度，GB/s

11.6 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

13.9 12.8
写入速度，GB/s

9.7 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 2089

RAM Latency Calculator

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最新比较

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Panram International Corporation L421008G4C1528K34O8A 8

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 99U5663-007.A00G 16GB

Kingston 99U5663-007.A00G 16GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Apacer Technology GD2.1140CH.001 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Hewlett-Packard 7EH64AA#ABC 8GB

Hewlett-Packard 7EH64AA#ABC 8GB