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Samsung M378B5273DH0-CH9 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB

Samsung M378B5273DH0-CH9 4GB vs HT Micron HTH5AN8G8NCJR-VKD 8GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
HT Micron HTH5AN8G8NCJR-VKD 8GB 需要考虑的原因
HT Micron HTH5AN8G8NCJR-VKD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 41
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 31
  • 读取速度，GB/s
    13.3 left arrow 15.7
  • 写入速度，GB/s
    8.3 left arrow 9.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 2713

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F3-2400C11-8GSR 8GB
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内存RAM
Crucial Technology CT102464BA160B.M16 8GB
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Patriot Memory (PDP Systems) 4266 C18 Series 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
内存RAM
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内存RAM
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内存RAM
A-DATA Technology MI64C1D1629Z1 8GB
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内存RAM
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Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM
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Kingston KHX3200C18D4/8G 8GB
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Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
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SK Hynix HYMP125S64CP8-S6 2GB
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Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
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SpecTek Incorporated 16G2666CL19 16GB
内存RAM
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Crucial Technology BL16G32C16U4B.M16FE 16GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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A-DATA Technology AX4S2800316G18-B 16GB
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