Samsung M378B5273DH0-CH9 4GB vs Kingston MSI24D4U7S8MH-8 8GB

总分

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB

差异规格评论

差异

Samsung M378B5273DH0-CH9 4GB

需要考虑的原因
Samsung M378B5273DH0-CH9 4GB

报告一个错误

Kingston MSI24D4U7S8MH-8 8GB

需要考虑的原因
Kingston MSI24D4U7S8MH-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

16.6 13.3

测试中的平均数值
更快的写入速度，GB/s

11.8 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273DH0-CH9 4GB

Kingston MSI24D4U7S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

13.3 16.6
写入速度，GB/s

8.3 11.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2176 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Heoriady HX2666CX15D4/4G 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Crucial Technology CT102464BF160B-16F 8GB

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Samsung M378A1G43EB1-CRC 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Kingston 9905598-040.A00G 16GB

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A-DATA Technology DQKD1A08 1GB

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Crucial Technology CT16G4DFD8266.C16FJ 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Corsair CMK16GX4M2E3200C16 8GB

Corsair CMK16GX4M2E3200C16 8GB

Samsung M378B5673FH0-CH9 2GB

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Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston 9965640-004.C00G 16GB

Kingston 9965640-004.C00G 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB