Samsung M378B5273EB0-CK0 4GB vs G Skill Intl F4-4000C19-16GTRG 16GB

总分

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

总分

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

差异规格评论

差异

Samsung M378B5273EB0-CK0 4GB

需要考虑的原因
Samsung M378B5273EB0-CK0 4GB

报告一个错误

G Skill Intl F4-4000C19-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 -54% 更低的延时
更快的读取速度，GB/s

19.4 14.6

测试中的平均数值
更快的写入速度，GB/s

18.9 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273EB0-CK0 4GB

G Skill Intl F4-4000C19-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 24
读取速度，GB/s

14.6 19.4
写入速度，GB/s

9.6 18.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2409 4219

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Apacer Technology D12.2326WH.001 16GB

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Samsung M2S4G64CB8HD5N-CG 4GB

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AMD R538G1601S2LS 8GB

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Kingston HX316C10F/4 4GB

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AMD R534G1601U1S-UO 4GB

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Samsung M378A1K43EB2-CWE 8GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Shenzen Recadata Storage Technology 8GB

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