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Samsung M378B5673EH1-CF8 2GB
A-DATA Technology DDR4 3200 2OZ 4GB

Samsung M378B5673EH1-CF8 2GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
A-DATA Technology DDR4 3200 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.2 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    12.7 left arrow 17.2
  • 写入速度，GB/s
    7.5 left arrow 13.8
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3409

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Kingston 9905678-058.A00G 4GB
Kingston 9905678-058.A00G 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CM4X16GC3000C15D4 16GB
Corsair CM4X16GC3000C15D4 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905702-119.A00G 8GB
Kingston 9905702-119.A00G 8GB
内存RAM