Samsung M378B5673EH1-CF8 2GB vs Crucial Technology BLS8G4D240FSA.16FAD 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时

Crucial Technology BLS8G4D240FSA.16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAD 8GB

报告一个错误

更快的读取速度，GB/s

13.6 12.7

测试中的平均数值
更快的写入速度，GB/s

10.8 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

12.7 13.6
写入速度，GB/s

7.5 10.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Corsair CMH32GX4M4E3200C16 8GB

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Kingston 9965433-034.A00LF 4GB

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Corsair CMD16GX4M4B2133C10 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Samsung M393A1K43BB1-CTD 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMSX16GX4M2A3000C16 8GB

Corsair CMSX16GX4M2A3000C16 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Kingston 9965669-017.A00G 16GB

Kingston 9965669-017.A00G 16GB