Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT16G4SFS832A.C8FB 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 30% 更低的延时

Crucial Technology CT16G4SFS832A.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFS832A.C8FB 16GB

报告一个错误

更快的读取速度，GB/s

15.9 12.7

测试中的平均数值
更快的写入速度，GB/s

12.3 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 40
读取速度，GB/s

12.7 15.9
写入速度，GB/s

7.5 12.3
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1988 3020

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CM4X16GE2400C16S4 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 99U5584-001.A00LF 4GB

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Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston KHX2666C15S4/8G 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

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Kingston KH2400C15D4/8 8GB

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Avant Technology F641GU67F9333G 8GB

Kingston XJV223-MIE 16GB

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