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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT8G4DFD824A.C16FBD2 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Crucial Technology CT8G4DFD824A.C16FBD2 8GB 需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 28
  • 读取速度，GB/s
    12.7 left arrow 16.7
  • 写入速度，GB/s
    7.5 left arrow 10.4
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2962

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
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Gloway International (HK) STKD4XMP2400-F 4GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Apacer Technology GD2.22428S.001 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
内存RAM