Samsung M378B5673EH1-CF8 2GB vs INTENSO 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

INTENSO 4GB

INTENSO 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时
更快的读取速度，GB/s

12.7 12.1

测试中的平均数值

INTENSO 4GB

需要考虑的原因
INTENSO 4GB

报告一个错误

更快的写入速度，GB/s

9.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

INTENSO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

12.7 12.1
写入速度，GB/s

7.5 9.3
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston LV32D4U2S8HD-8X 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Essencore Limited KD4AGU880-36A180U 16GB

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Kingston 99U5474-038.A00LF 4GB

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SK Hynix HMA851S6CJR6N-UH 4GB

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Samsung M393B5170FH0-CK0 4GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Transcend Information TS2GSH64V4B 16GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-2666C15-4GVR 4GB

G Skill Intl F4-2666C15-4GVR 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

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Kingston 99U5471-012.A00LF 4GB

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Corsair CMD16GX4M4C3200C15 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CM4B8G2J2400A14K 8GB

Corsair CM4B8G2J2400A14K 8GB