Samsung M378B5673EH1-CF8 2GB vs Micron Technology 18ASF1G72PDZ-2G3A2 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时
更快的读取速度，GB/s

12.7 10.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

报告一个错误

更快的写入速度，GB/s

8.1 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.7 10.3
写入速度，GB/s

7.5 8.1
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Samsung M378B5673EH1-CF8 2GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Essencore Limited KD44GU480-26N160T 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMSX64GX4M2A2933C19 32GB

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Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB