Samsung DDR3 8GB 1600MHz 8GB vs Wilk Elektronik S.A. GR3200S464L22/16G 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 46

左右 7% 更低的延时

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. GR3200S464L22/16G 16GB

报告一个错误

更快的读取速度，GB/s

16.6 14.9

测试中的平均数值
更快的写入速度，GB/s

15.4 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 46
读取速度，GB/s

14.9 16.6
写入速度，GB/s

9.6 15.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2506 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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