Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-4000C15-8GTRS 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

G Skill Intl F4-4000C15-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4000C15-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 51

左右 -143% 更低的延时
更快的读取速度，GB/s

19.2 9.8

测试中的平均数值
更快的写入速度，GB/s

18.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 21
读取速度，GB/s

9.8 19.2
写入速度，GB/s

8.1 18.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 4119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFRA32A.C8FE 8GB

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Panram International Corporation D4N2400PS-8G 8GB

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Kllisre DDR4-8GB 8GB

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PUSKILL DDR3 1600 8G 8GB

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Apacer Technology 78.D2GF2.4010B 16GB

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Qimonda 64T128020EDL2.5C2 1GB

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Crucial Technology BL16G30C15U4B.M16FE1 16GB

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Kingston 9905471-006.A00LF 4GB

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G Skill Intl F4-3600C17-16GTZKK 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Samsung M471B5173DB0-YK0 4GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB