Samsung M378B5673EH1-CF8 2GB vs Samsung M378B5773CH0-CH9 2GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 28% 更低的延时
更快的写入速度，GB/s

7.5 7.4

测试中的平均数值

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

更快的读取速度，GB/s

12.8 12.7

测试中的平均数值
更高的内存带宽，mbps

10600 8500

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5773CH0-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 39
读取速度，GB/s

12.7 12.8
写入速度，GB/s

7.5 7.4
内存带宽，mbps

8500 10600

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1988 1770

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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