Samsung M378B5673EH1-CF8 2GB vs Teikon TMA81GS6AFR8N-UHSC 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Teikon TMA81GS6AFR8N-UHSC 8GB

需要考虑的原因
Teikon TMA81GS6AFR8N-UHSC 8GB

报告一个错误

更快的读取速度，GB/s

13.5 12.7

测试中的平均数值
更快的写入速度，GB/s

8.5 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Teikon TMA81GS6AFR8N-UHSC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

12.7 13.5
写入速度，GB/s

7.5 8.5
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2026

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS6266.M4FE 8GB

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Corsair CMWX8GF2666C16W4 8GB

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Mushkin 991586 2GB

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A-DATA Technology DQKD1A08 1GB

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Corsair CMK16GX4M4C3200C16 4GB

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMR32GX4M4C3333C16 8GB

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Kingston 9905403-090.A01LF 4GB

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Corsair CM4X8GF2666Z16K4 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Samsung M378A4G43AB2-CWE 32GB

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