RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G30S815GK 8GB

Samsung M378B5673EH1-CF8 2GB vs V-Color Technology Inc. TA48G30S815GK 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
V-Color Technology Inc. TA48G30S815GK 8GB

V-Color Technology Inc. TA48G30S815GK 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
V-Color Technology Inc. TA48G30S815GK 8GB 需要考虑的原因
V-Color Technology Inc. TA48G30S815GK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 28
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    21.8 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 17
  • 读取速度，GB/s
    12.7 left arrow 21.8
  • 写入速度，GB/s
    7.5 left arrow 16.6
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3695

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

V-Color Technology Inc. TA48G30S815GK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A4K40BB2-CTD 32GB
Samsung M393A4K40BB2-CTD 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905712-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905712-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Avant Technology W642GU42J7240N8 16GB
Avant Technology W642GU42J7240N8 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM