RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB

Samsung M378B5673FH0-CH9 2GB vs A-DATA Technology AM2P26KC8T1-BXRS 8GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
A-DATA Technology AM2P26KC8T1-BXRS 8GB 需要考虑的原因
A-DATA Technology AM2P26KC8T1-BXRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 29
  • 读取速度，GB/s
    14.4 left arrow 14.9
  • 写入速度，GB/s
    9.5 left arrow 10.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2811

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-YK0 4GB
Corsair CMW32GX4M2D3000C16 16GB
Corsair CMW32GX4M2D3000C16 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston KKN2NM-MIE 4GB
Kingston KKN2NM-MIE 4GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM